Bit Line – Cells in a memory array, such as DRAM, are laid out in rows and a row is called a bit line (as in line of bits). Each cell can carry a binary bit value, logically zero or one. The array has set of wires, perpendicular to the bit lines, which are called word lines. The intersection between a bit line and a word line is the cell’s effective address. Electrical currents sent or received along the word and bit lines can be used to set or read the electrical resistance value of a cell and so provide binary values.