STT-MRAM – Spin Transfer Torque Magnetic Random Access Memory. (See MRAM.) STT-MRAM is a byte-addressable and nonvolatile memory with SRAM (Static RAM) and DRAM speed and the ability – its proponents claimed in 2018 – to be implemented in 7nm and 5nm processes that are smaller than DRAM and SRAM technology can manage, meaning greater density in less space.
STT-MRAM cells or storage elements have two ferromagnetic plates, electrodes, separated by non-magnetic material. One high-coercivity electrode has its magnetism pinned because it needs a larger magnet field or spin-polarised current to change its magnetic orientation compared to the other electrode.
