3D X-DRAM is a 3D DRAM technology invented by Neo Semiconductor and revealed in May 2023. The concept has a 3D NAND-like DRAM cell array structure based on capacitor-less floating body cell (FBC) technology. This FBC technology stores data as electric charges using one transistor and zero capacitors. NEO says it can be manufactured using current 3D NAND-like processes and only needs one mask to define the bit line holes and form the cell structure inside the holes. This provides a high-speed, high-density, low-cost, and high-yield fabrication solution.
NEO suggests 3D X-DRAM could scale past a 1Tb chip in the 2030-2035 period: