Floating Gate – A type of integrated circuit NAND cell invented in 1967 by Simon Sze of Bell Labs, which uses floating gate transistors. These have a polycrystalline silicon conductive layer, isolated between insulating (dielectric) layers, which can store electrons. The electrons are trapped in the floating gate but can be driven out by a high enough electrical current. The gate’s binary value floats between 1 and 0 depending on whether electrons are in the isolated layer (1) or have been driven out (0).
